ON Semiconductor
NSS12200WT1G
Bipolar Transistors - BJT 2A 12V Low VCEsat
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- NSS12200W
- Package
- SOT-363-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
17 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- - 12 V
- Collector- Base Voltage VCBO
- - 12 V
- Emitter- Base Voltage VEBO
- - 5 V
- Collector-Emitter Saturation Voltage
- - 170 mV
- Maximum DC Collector Current
- - 3 A
- Gain Bandwidth Product fT
- 100 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 300
- Height
- 0.9 mm
Show more parameters (5)
- Length
- 2 mm
- Width
- 1.25 mm
- Continuous Collector Current
- - 2 A
- Pd - Power Dissipation
- 450 mW
- Unit Weight
- 0.000265 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.