Diodes Incorporated
DXT5551P5-13
Bipolar Transistors - BJT BIPOLAR TRANS,NPN 160V, 600mA
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- Bipolar Transistors - BJT
- Series
- DXT5551
- Package
- PowerDI-5
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 160 V
- Collector- Base Voltage VCBO
- 180 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 200 mV
- Maximum DC Collector Current
- 600 mA
- Gain Bandwidth Product fT
- 130 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- 600 mA
- DC Collector/Base Gain hfe Min
- 30 at 50 mA, 5 V
Show more parameters (2)
- Pd - Power Dissipation
- 700 mW
- Unit Weight
- 0.003386 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.