ON Semiconductor
ECH8501-TL-H
Bipolar Transistors - BJT BIP PNP+NPN 5A 30V
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- ECH8501
- Package
- ECH-8
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Transistor Polarity
- NPN, PNP
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- 30 V
- Collector- Base Voltage VCBO
- 40 V, - 30 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 75 mV, - 100 mV
- Maximum DC Collector Current
- 30 A
- Gain Bandwidth Product fT
- 260 MHz, 280 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 560 at 500 mA, 2 V
- DC Collector/Base Gain hfe Min
- 200 at 500 mA, 2 V
Show more parameters (2)
- Pd - Power Dissipation
- 1.6 W
- Unit Weight
- 0.000638 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.