ChipSourceHub

ON Semiconductor

NSVT30010MXV6T1G

Bipolar Transistors - BJT DUAL MATCHED PNP GP XTT

Basic Information

View Datasheet ↗
Manufacturer
ON Semiconductor
Product Category
Bipolar Transistors - BJT
Series
NST30010MXV6
Package
SOT-563-6
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

8 parameters
Transistor Polarity
PNP
Collector- Emitter Voltage VCEO Max
- 30 V
Emitter- Base Voltage VEBO
- 5 V
Continuous Collector Current
- 100 mA
DC Collector/Base Gain hfe Min
270
Pd - Power Dissipation
357 mW
Qualification
AEC-Q101
Unit Weight
0.000106 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

NSVT30010MXV6T1G Specifications and Datasheet | ChipSourceHub