Infineon Technologies
FF4MR12W2M1HPB11BPSA1
Discrete Semiconductor Modules CoolSiC MOSFET half-bridge module 1200 V
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- Discrete Semiconductor Modules
- Packaging
- Tray
Technical Specifications
9 parameters- Type
- Half Bridge
- Technology
- Si
- Vgs - Gate-Source Voltage
- - 10 V, + 23 V
- Configuration
- Dual
- Country of Origin
- AT
- Id - Continuous Drain Current
- 170 A
- Vds - Drain-Source Breakdown Voltage
- 1.2 kV
- Vgs th - Gate-Source Threshold Voltage
- 5.15 V
- Part # Aliases
- FF4MR12W2M1HP_B11 -
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.