ON Semiconductor / Fairchild
BUT11AFTU
Bipolar Transistors - BJT NPN Si Transistor
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Brand
- ON Semiconductor / Fairchild
- Product Category
- Bipolar Transistors - BJT
- Series
- BUT11AF
- Package
- TO-220-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 450 V
- Collector- Base Voltage VCBO
- 1 kV
- Emitter- Base Voltage VEBO
- 9 V
- Collector-Emitter Saturation Voltage
- 1.5 V
- Maximum DC Collector Current
- 5 A
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Height
- 9.19 mm
- Length
- 10.16 mm
- Width
- 4.7 mm
Show more parameters (3)
- Continuous Collector Current
- 5 A
- Pd - Power Dissipation
- 40000 mW
- Unit Weight
- 0.080072 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.