Central Semiconductor
MM3007 PBFREE
Bipolar Transistors - BJT NPN 120Vcbo 100Vceo 5.0Vebo 250mA 15pF
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Package
- TO-39-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
Technical Specifications
9 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Base Voltage VCBO
- 120 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 350 mV
- Gain Bandwidth Product fT
- 50 MHz
- DC Collector/Base Gain hfe Min
- 50 at 250 mA, 1 V
- DC Current Gain hFE Max
- 250 at 250 mA, 1 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.