Central Semiconductor
2N5223 TIN/LEAD
Bipolar Transistors - BJT NPN 25Vcbo 20Vceo 3.0Vebo 10mA 4pF
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N5223
- Package
- TO-92-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
Technical Specifications
10 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Base Voltage VCBO
- 25 V
- Emitter- Base Voltage VEBO
- 3 V
- Collector-Emitter Saturation Voltage
- 1.2 V
- Gain Bandwidth Product fT
- 150 MHz
- Country of Origin
- US
- DC Collector/Base Gain hfe Min
- 50 at 0.7 V, 10 mA
- DC Current Gain hFE Max
- 800 at 0.7 V, 10 mA
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.