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NXP / Freescale

MRF6V10010NR4

RF MOSFET Transistors VHV6 10W PULSE PLD1.5

Basic Information

View Datasheet ↗
Manufacturer
NXP
Brand
NXP / Freescale
Product Category
RF MOSFET Transistors
Series
MRF6V10010N
Package
PLD-1.5
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
E

Technical Specifications

18 parameters
Transistor Polarity
N-Channel
Technology
Si
Vds - Drain-Source Breakdown Voltage
100 V
Gain
25 dB
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
Configuration
Single Dual Source
Height
1.83 mm
Length
6.73 mm
Operating Frequency
960 MHz to 1400 MHz
Type
RF Power MOSFET
Width
5.97 mm
Show more parameters (6)
Channel Mode
Enhancement
Moisture Sensitive
Yes
Vgs - Gate-Source Voltage
- 6 V, 10 V
Vgs th - Gate-Source Threshold Voltage
1.7 V
Part # Aliases
935321297531
Unit Weight
0.009877 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

MRF6V10010NR4 Specifications and Datasheet | ChipSourceHub