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NXP / Freescale

MRFG35003N6AT1

RF JFET Transistors 3.5GHZ 3W 6V GAAS PLD1.5

Basic Information

View Datasheet ↗
Manufacturer
NXP
Brand
NXP / Freescale
Product Category
RF JFET Transistors
Series
MRFG35003N6AT1
Package
PLD-1.5
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
E

Technical Specifications

15 parameters
Transistor Type
pHEMT
Technology
GaAs
Gain
10 dB
Vds - Drain-Source Breakdown Voltage
8 V
Vgs - Gate-Source Breakdown Voltage
- 5 V
Id - Continuous Drain Current
2.9 A
Maximum Operating Temperature
+ 85 C
Configuration
Single Dual Source
Operating Frequency
3.55 GHz
Product
RF JFET
Type
GaAs pHEMT
Moisture Sensitive
Yes
Show more parameters (3)
P1dB - Compression Point
3 W
Part # Aliases
935309639515
Unit Weight
0.009877 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

MRFG35003N6AT1 Specifications and Datasheet | ChipSourceHub