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Qorvo

T1G4020036-FS

RF JFET Transistors DC-3.5GHz GaN 2X 120W 36Volt

Basic Information

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Manufacturer
Qorvo
Product Category
RF JFET Transistors
Packaging
Tray
RoHS
Compliant (source record)

Technical Specifications

9 parameters
Transistor Type
HEMT
Technology
GaN SiC
Gain
16 dB
Transistor Polarity
N-Channel
Output Power
260 W
Operating Frequency
3.5 GHz
Type
GaN SiC HEMT
Moisture Sensitive
Yes
Part # Aliases
1111631

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

T1G4020036-FS Specifications and Datasheet | ChipSourceHub