ChipSourceHub

Vishay / Siliconix

SI2307CDS-T1-BE3

MOSFETs P-CHANNEL 30V (D-S)

Basic Information

View Datasheet ↗
Manufacturer
Vishay
Brand
Vishay / Siliconix
Product Category
MOSFETs
Series
SI2307CDS
Package
SOT-23-3
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

21 parameters
Technology
Si
Transistor Polarity
P-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
30 V
Id - Continuous Drain Current
3.5 A
Rds On - Drain-Source Resistance
88 mOhms
Vgs - Gate-Source Voltage
- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage
3 V
Qg - Gate Charge
4.1 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
1.8 W
Show more parameters (9)
Channel Mode
Enhancement
Tradename
TrenchFET
Country of Origin
TW
Fall Time
7.7 ns
Rise Time
13 ns
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
17 ns
Typical Turn-On Delay Time
5.5 ns
Part # Aliases
SI2307CDS-T1-GE3 SI2307CDS-T1-E3

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

SI2307CDS-T1-BE3 Specifications and Datasheet | ChipSourceHub