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Toshiba

RN2105MFV,L3F

Bipolar Transistors - Pre-Biased Bias Resistor PNP -.1A -50V 2.2kohm

Basic Information

View Datasheet ↗
Manufacturer
Toshiba
Product Category
Bipolar Transistors - Pre-Biased
Series
RN2105MFV
Package
SOT-723-3
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

15 parameters
Configuration
Single
Transistor Polarity
PNP
Typical Input Resistor
2.2 kOhms
Typical Resistor Ratio
0.0468
DC Collector/Base Gain hfe Min
80
Maximum Operating Frequency
250 MHz
Collector- Emitter Voltage VCEO Max
- 50 V
Continuous Collector Current
- 100 mA
Peak DC Collector Current
- 100 mA
Pd - Power Dissipation
150 mW
Maximum Operating Temperature
+ 150 C
Emitter- Base Voltage VEBO
- 5 V
Show more parameters (3)
Channel Mode
Enhancement
Maximum DC Collector Current
- 100 mA
Unit Weight
0.000053 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

RN2105MFV,L3F Specifications and Datasheet | ChipSourceHub