Panasonic
PGA26E19BA
MOSFET MOSFET 600VDC 190mohm X-GaN
Basic Information
View Datasheet ↗- Manufacturer
- Panasonic
- Product Category
- MOSFET
- Series
- PGA26E19BA
- Package
- DFN-8
- Mounting Style
- SMD/SMT
- RoHS
- Compliant (source record)
Technical Specifications
20 parameters- Technology
- GaN
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 600 V
- Id - Continuous Drain Current
- 13 A
- Rds On - Drain-Source Resistance
- 190 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 1.2 V
- Vgs - Gate-Source Voltage
- 10 V
- Qg - Gate Charge
- 2 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 69 W
Show more parameters (8)
- Configuration
- Single
- Channel Mode
- Enhancement
- Tradename
- X-GaN
- Fall Time
- 2.4 ns
- Moisture Sensitive
- Yes
- Rise Time
- 5.2 ns
- Typical Turn-Off Delay Time
- 3.4 ns
- Typical Turn-On Delay Time
- 3.4 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.