Qorvo
TGF2929-HM
RF JFET Transistors DC-3.5GHz 100W 28V Gain 17.4dB GaN
Basic Information
View Datasheet ↗- Manufacturer
- Qorvo
- Product Category
- RF JFET Transistors
- Series
- TGF
- Mounting Style
- SMD/SMT
- Packaging
- Waffle
- RoHS
- Compliant (source record)
Technical Specifications
17 parameters- Transistor Type
- HEMT
- Technology
- GaN SiC
- Gain
- 17.4 dB
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 50 V
- Vgs - Gate-Source Breakdown Voltage
- - 2.8 V
- Id - Continuous Drain Current
- 7.2 A
- Output Power
- 132 W
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 85 C
- Pd - Power Dissipation
- 140 W
- Configuration
- Single
Show more parameters (5)
- Operating Frequency
- DC to 3.5 GHz
- Operating Temperature Range
- - 40 C to + 85 C
- Development Kit
- TGF2929-HM EVB1
- Moisture Sensitive
- Yes
- Part # Aliases
- 1135635
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.