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Renesas Electronics

UPA2735GR-E1-AX

MOSFETs POWER TRANSISTOR

Basic Information

View Datasheet ↗
Manufacturer
Renesas Electronics
Product Category
MOSFETs
Series
UPA2735GR
Package
SOP-8
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

19 parameters
Technology
Si
Transistor Polarity
P-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
30 V
Id - Continuous Drain Current
16 A
Rds On - Drain-Source Resistance
5 mOhms
Vgs - Gate-Source Voltage
- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage
2.5 V
Qg - Gate Charge
195 nC
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
1.1 W
Channel Mode
Enhancement
Show more parameters (7)
Country of Origin
MY
Fall Time
400 ns
Forward Transconductance - Min
10 S
Rise Time
85 ns
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
300 ns
Typical Turn-On Delay Time
35 ns

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

UPA2735GR-E1-AX Specifications and Datasheet | ChipSourceHub