NXP Semiconductors
A2G22S190-01SR3
RF MOSFET Transistors Airfast RF Power GaN Transistor, 1800-2200 MHz, 36 W Avg., 48 V
Basic Information
View Datasheet ↗- Manufacturer
- NXP
- Brand
- NXP Semiconductors
- Product Category
- RF MOSFET Transistors
- Series
- A2G22S190
- Package
- NI-400S-2
- Mounting Style
- SMD/SMT
- Packaging
- Reel
- RoHS
- Compliant (source record)
Technical Specifications
13 parameters- Transistor Polarity
- N-Channel
- Technology
- GaN Si
- Id - Continuous Drain Current
- 19 mA
- Vds - Drain-Source Breakdown Voltage
- 150 V
- Gain
- 16.5 dB
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Operating Frequency
- 1800 MHz to 2200 MHz
- Type
- RF Power MOSFET
- Number of Channels
- 1 Channel
- Vgs - Gate-Source Voltage
- - 8 V
- Vgs th - Gate-Source Threshold Voltage
- - 2.3 V
Show more parameters (1)
- Part # Aliases
- 935372783118
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.