ON Semiconductor / Fairchild
HGTG30N60B3D
IGBT Transistors 600V IGBT UFS N-Channel
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Brand
- ON Semiconductor / Fairchild
- Product Category
- IGBT Transistors
- Series
- HGTG30N60B3D
- Package
- TO-247-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
17 parameters- Technology
- Si
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 600 V
- Collector-Emitter Saturation Voltage
- 1.45 V
- Maximum Gate Emitter Voltage
- 20 V
- Continuous Collector Current at 25 C
- 60 A
- Pd - Power Dissipation
- 208 W
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current Ic Max
- 60 A
- Height
- 20.82 mm
- Length
- 15.87 mm
Show more parameters (5)
- Width
- 4.82 mm
- Continuous Collector Current
- 60 A
- Gate-Emitter Leakage Current
- +/- 250 nA
- Part # Aliases
- HGTG30N60B3D_NL
- Unit Weight
- 0.225401 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.