Microchip Technology
2N3763U4
Bipolar Transistors - BJT 60V 1.5A 500Mw Power BJT SMT
Basic Information
View Datasheet ↗- Manufacturer
- Microchip
- Brand
- Microchip Technology
- Product Category
- Bipolar Transistors - BJT
- Package
- TO-39-3
- Mounting Style
- Through Hole
- Packaging
- Tray
- RoHS
- Not compliant (source record)
Technical Specifications
14 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Maximum DC Collector Current
- 1.5 A
- Collector- Emitter Voltage VCEO Max
- 60 V
- Collector- Base Voltage VCBO
- 60 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 900 mV
- Pd - Power Dissipation
- 500 mW
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 200 C
- Continuous Collector Current
- 1.5 A
Show more parameters (2)
- DC Collector/Base Gain hfe Min
- 20
- DC Current Gain hFE Max
- 80
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.