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Toshiba

RN2111MFV(TPL3)

Bipolar Transistors - Pre-Biased 100mA -50volts 3Pin 10Kohms

Basic Information

View Datasheet ↗
Manufacturer
Toshiba
Product Category
Bipolar Transistors - Pre-Biased
Series
RN2111
Package
SOT-723
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Not compliant (source record)

Technical Specifications

13 parameters
Configuration
Single
Transistor Polarity
PNP
Typical Input Resistor
10 kOhms
DC Collector/Base Gain hfe Min
400
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
- 100 mA
Peak DC Collector Current
100 mA
Pd - Power Dissipation
150 mW
Maximum Operating Temperature
+ 150 C
DC Current Gain hFE Max
120
Height
0.5 mm
Length
1.2 mm
Show more parameters (1)
Width
0.8 mm

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

RN2111MFV(TPL3) Specifications and Datasheet | ChipSourceHub