NXP Semiconductors
A3V09H521-24SR6
RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 720-960 MHz, 107 W Avg., 48 V
Basic Information
View Datasheet ↗- Manufacturer
- NXP
- Brand
- NXP Semiconductors
- Product Category
- RF MOSFET Transistors
- Series
- MRF300
- Package
- NI-1230S-4L2L
- Mounting Style
- SMD/SMT
- Packaging
- Reel
Technical Specifications
12 parameters- Transistor Polarity
- N-Channel
- Technology
- Si
- Vds - Drain-Source Breakdown Voltage
- - 0.5 V, +100 V
- Gain
- 18.6 dB
- Output Power
- 107 W
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 225 C
- Operating Frequency
- 720 to 960 MHz
- Type
- RF Power MOSFET
- Vgs - Gate-Source Voltage
- + 6 V, +10 V
- Vgs th - Gate-Source Threshold Voltage
- 1.8 V
- Part # Aliases
- 935383305128
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.