Nexperia
MJD2873-QJ
Bipolar Transistors - BJT SOT428 50V 2A NPN HI PWR BJT
Basic Information
View Datasheet ↗- Manufacturer
- Nexperia
- Product Category
- Bipolar Transistors - BJT
- Package
- DPAK-3 (TO-252-3)
- Mounting Style
- SMD/SMT
- Packaging
- Reel
Technical Specifications
17 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Maximum DC Collector Current
- 3 A
- Collector- Emitter Voltage VCEO Max
- 50 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 300 mV
- Pd - Power Dissipation
- 1.6 W
- Gain Bandwidth Product fT
- 65 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Qualification
- AEC-Q101
Show more parameters (5)
- Continuous Collector Current
- 2 A
- Country of Origin
- MY
- DC Collector/Base Gain hfe Min
- 120 at 500 mA, 2 V
- DC Current Gain hFE Max
- 360 at 500 mA, 2 V
- Part # Aliases
- 934662845118
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.