Nexperia
PEMD3,315
Bipolar Transistors - Pre-Biased TransDigital BJT NPN PNP 50V 200mW
Basic Information
View Datasheet ↗- Manufacturer
- Nexperia
- Product Category
- Bipolar Transistors - Pre-Biased
- Package
- SOT-666-6
- Mounting Style
- SMD/SMT
- Packaging
- 2.2 kOhms
- RoHS
- Compliant (source record)
Technical Specifications
20 parameters- Configuration
- Dual
- Transistor Polarity
- NPN, PNP
- Typical Input Resistor
- 10 kOhms
- Typical Resistor Ratio
- 1
- DC Collector/Base Gain hfe Min
- 30
- Collector- Emitter Voltage VCEO Max
- 50 V
- Continuous Collector Current
- 100 mA
- Peak DC Collector Current
- 100 mA
- Pd - Power Dissipation
- 200 mW
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Collector- Base Voltage VCBO
- 50 V
Show more parameters (8)
- Emitter- Base Voltage VEBO
- 10 V
- Height
- 0.6 mm
- Length
- 1.7 mm
- Operating Temperature Range
- - 65 C to + 150 C
- Width
- 0.6 mm
- Number of Channels
- 2 Channel
- Qualification
- AEC-Q101
- Unit Weight
- 0.000099 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.