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STMicroelectronics

RF2L36075CF2

RF MOSFET Transistors 75 W, 28 V, 3.1 to 3.6 GHz RF power LDMOS transistor

Basic Information

View Datasheet ↗
Manufacturer
STMicroelectronics
Product Category
RF MOSFET Transistors
Package
B2-3
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

16 parameters
Transistor Polarity
N-Channel
Technology
Si
Id - Continuous Drain Current
2.5 A
Vds - Drain-Source Breakdown Voltage
60 V
Rds On - Drain-Source Resistance
1 Ohms
Operating Frequency
3.5 GHz
Gain
12.5 dB
Output Power
75 W
Maximum Operating Temperature
+ 200 C
Country of Origin
CN
Moisture Sensitive
Yes
Number of Channels
1 Channel
Show more parameters (4)
Type
RF Power MOSFET
Vgs - Gate-Source Voltage
+ 10 V
Vgs th - Gate-Source Threshold Voltage
2.5 V
Unit Weight
0.105822 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

RF2L36075CF2 Specifications and Datasheet | ChipSourceHub