Vishay / Siliconix
SIRA88BDP-T1-GE3
MOSFET N-Channel 30 V (D-S) MOSFET
Basic Information
View Datasheet ↗- Manufacturer
- Vishay
- Brand
- Vishay / Siliconix
- Product Category
- MOSFET
- Package
- PowerPAK SO-8
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- E
Technical Specifications
17 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 30 V
- Id - Continuous Drain Current
- 40 A
- Rds On - Drain-Source Resistance
- 5.5 mOhms
- Vgs th - Gate-Source Threshold Voltage
- - 4.4 V
- Vgs - Gate-Source Voltage
- - 16 V, + 20 V
- Qg - Gate Charge
- 12.2 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Channel Mode
- Enhancement
Show more parameters (5)
- Tradename
- TrenchFET
- Fall Time
- 5 ns
- Rise Time
- 5 ns
- Typical Turn-Off Delay Time
- 15 ns
- Typical Turn-On Delay Time
- 8 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.