Central Semiconductor
2N4300 TIN/LEAD
Bipolar Transistors - BJT NPN 100Vcbo 80Vceo 6.0Vebo 1.0mA
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N4300
- Package
- TO-39-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
Technical Specifications
10 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 80 V
- Collector- Base Voltage VCBO
- 100 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 300 mV
- Gain Bandwidth Product fT
- 30 MHz
- DC Collector/Base Gain hfe Min
- 30
- DC Current Gain hFE Max
- 120
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.