Central Semiconductor
2N917
Bipolar Transistors - BJT NPN Low Noise
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N917
- Package
- TO-72-3
- Mounting Style
- Through Hole
- RoHS
- Compliant (source record)
Technical Specifications
9 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 15 V
- Collector- Base Voltage VCBO
- 30 V
- Emitter- Base Voltage VEBO
- 3 V
- Collector-Emitter Saturation Voltage
- 0.5 V
- Gain Bandwidth Product fT
- 500 MHz
- Height
- 5.33 mm
- DC Collector/Base Gain hfe Min
- 20
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.