Central Semiconductor
PN5130 TIN/LEAD
Bipolar Transistors - BJT NPN 20Vcbo 12Vceo 3.0Vebo 10mA 3.5pF
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- PN5130
- Package
- TO-92-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
Technical Specifications
8 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Base Voltage VCBO
- 30 V
- Emitter- Base Voltage VEBO
- 1 V
- Collector-Emitter Saturation Voltage
- 600 mV
- DC Collector/Base Gain hfe Min
- 15 at 10 V, 8 mA
- DC Current Gain hFE Max
- 250 at 10 V, 8 mA
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.