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ON Semiconductor

NSVBC848CLT1G

Bipolar Transistors - BJT SS SOT23 GP XSTR NPN 30V

Basic Information

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Manufacturer
ON Semiconductor
Product Category
Bipolar Transistors - BJT
Series
BC848CL
Package
SOT-23-3
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

15 parameters
Technology
Si
Transistor Polarity
NPN
Configuration
Single
Collector- Emitter Voltage VCEO Max
30 V
Collector- Base Voltage VCBO
30 V
Emitter- Base Voltage VEBO
5 V
Collector-Emitter Saturation Voltage
250 mV
Maximum DC Collector Current
100 mA
Gain Bandwidth Product fT
100 MHz
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
DC Current Gain hFE Max
800 at 2 mA, 5 V
Show more parameters (3)
DC Collector/Base Gain hfe Min
420 at 2 mA, 5 V
Qualification
AEC-Q101
Unit Weight
0.000282 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

NSVBC848CLT1G Specifications and Datasheet | ChipSourceHub