Toshiba
TPCP8701(TE85L,F,M
Bipolar Transistors - BJT Transistor NPN Dual 50V, 2A
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - BJT
- Series
- TPCP8701
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
12 parameters- Transistor Polarity
- NPN
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- 50 V
- Collector- Base Voltage VCBO
- 100 V
- Emitter- Base Voltage VEBO
- 7 V
- Maximum DC Collector Current
- 3 A
- Maximum Operating Temperature
- + 150 C
- Height
- 0.8 mm
- Length
- 2.9 mm
- Width
- 2.4 mm
- DC Collector/Base Gain hfe Min
- 400 at 300 mA, 2 V
- Pd - Power Dissipation
- 1770 mW
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.