Infineon Technologies
IMW120R140M1HXKSA1
MOSFET
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- MOSFET
- Package
- TO-247-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
17 parameters- Technology
- SiC
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 1200 V
- Id - Continuous Drain Current
- 19 A
- Rds On - Drain-Source Resistance
- 182 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 5.7 V
- Vgs - Gate-Source Voltage
- - 7 V, 23 V
- Qg - Gate Charge
- 13 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 94 W
Show more parameters (5)
- Configuration
- Single
- Channel Mode
- Enhancement
- Transistor Type
- 1 N-Channel
- Forward Transconductance - Min
- 3 S
- Part # Aliases
- IMW120R140M1H SP001946184
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.