Infineon Technologies
BFP 520F H6327
RF Bipolar Transistors RF BIP TRANSISTOR
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- RF Bipolar Transistors
- Series
- BFP520
- Package
- TSFP-4
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Transistor Type
- Bipolar
- Technology
- Si
- Transistor Polarity
- NPN
- DC Collector/Base Gain hfe Min
- 70
- Collector- Emitter Voltage VCEO Max
- 2.5 V
- Emitter- Base Voltage VEBO
- 1 V
- Continuous Collector Current
- 40 mA
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Configuration
- Single
- Operating Frequency
- 45 GHz
- Type
- RF Bipolar Small Signal
Show more parameters (2)
- Pd - Power Dissipation
- 100 mW
- Part # Aliases
- BFP520FH6327XTSA1 BFP52FH6327XT SP000745282
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.