Infineon Technologies
IRFHM792TRPBF
MOSFET 100V DUAL N-CH HEXFET
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- MOSFET
- Package
- PQFN-8
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
23 parameters- Technology
- Si
- Number of Channels
- 2 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 100 V
- Id - Continuous Drain Current
- 2.3 A
- Rds On - Drain-Source Resistance
- 195 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 3 V
- Vgs - Gate-Source Voltage
- 20 V
- Qg - Gate Charge
- 4.2 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 2.3 W
Show more parameters (11)
- Configuration
- Dual
- Height
- 0.9 mm
- Length
- 3.3 mm
- Transistor Type
- 2 N-Channel
- Width
- 3.3 mm
- Forward Transconductance - Min
- 3.5 S
- Fall Time
- 2.6 ns
- Rise Time
- 4.7 ns
- Typical Turn-Off Delay Time
- 5.2 ns
- Typical Turn-On Delay Time
- 3.4 ns
- Part # Aliases
- SP001554848
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.