Infineon Technologies
IMZA120R007M1HXKSA1
SiC MOSFETs CoolSiC 1200 V, 7 mohm SiC Trench MOSFET in TO247-4 package
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- SiC MOSFETs
- Package
- TO-247-4
- Mounting Style
- Through Hole
- Packaging
- Tube
Technical Specifications
18 parameters- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 1.2 kV
- Id - Continuous Drain Current
- 225 A
- Rds On - Drain-Source Resistance
- 7 mOhms
- Vgs - Gate-Source Voltage
- - 10 V, + 23 V
- Vgs th - Gate-Source Threshold Voltage
- 4.2 V
- Qg - Gate Charge
- 220 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 750 W
- Channel Mode
- Enhancement
Show more parameters (6)
- Country of Assembly
- CN
- Country of Diffusion
- MY
- Country of Origin
- AU
- Product
- MOSFETs
- Technology
- SiC
- Part # Aliases
- IMZA120R007M1H SP005425973
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.