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ROHM Semiconductor

2SAR502U3T106

Bipolar Transistors - BJT PNP -0.5A Ic -30V UMT3

Basic Information

View Datasheet ↗
Manufacturer
ROHM Semiconductor
Product Category
Bipolar Transistors - BJT
Series
BM14270MUV-LB
Package
SOT-323-3
Mounting Style
SMD/SMT
Packaging
Single
RoHS
Compliant (source record)

Technical Specifications

14 parameters
Technology
Si
Transistor Polarity
PNP
Configuration
Single
Collector- Emitter Voltage VCEO Max
- 30 V
Collector- Base Voltage VCBO
- 30 V
Emitter- Base Voltage VEBO
- 6 V
Collector-Emitter Saturation Voltage
- 150 mV
Maximum DC Collector Current
- 1 A
Gain Bandwidth Product fT
520 MHz
Maximum Operating Temperature
+ 150 C
DC Current Gain hFE Max
500
Continuous Collector Current
- 0.5 A
Show more parameters (2)
DC Collector/Base Gain hfe Min
200
Pd - Power Dissipation
200 mW

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

2SAR502U3T106 Specifications and Datasheet | ChipSourceHub