Diodes Incorporated
ZTD09N50DE6QTA
Bipolar Transistors - BJT 50V Dual NPN Low Sat 1A 7V Vebo
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- Bipolar Transistors - BJT
- Series
- ZTD09N50
- Package
- SOT-26-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Transistor Polarity
- NPN
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- 50 V
- Collector- Base Voltage VCBO
- 50 V
- Emitter- Base Voltage VEBO
- 7 V
- Collector-Emitter Saturation Voltage
- 24 mV
- Maximum DC Collector Current
- 1 A
- Gain Bandwidth Product fT
- 215 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Collector/Base Gain hfe Min
- 200 at 10 mA, 2 V
- Pd - Power Dissipation
- 700 mW
Show more parameters (2)
- Qualification
- AEC-Q101
- Unit Weight
- 0.000529 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.