Central Semiconductor
CMUDM8005 TR
MOSFET 20V P-Ch Enh FET 8.0Vgs 650mA 300mW
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- MOSFET
- Series
- CMUDM8
- Package
- SOT-523
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
21 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- P-Channel
- Vds - Drain-Source Breakdown Voltage
- 20 V
- Id - Continuous Drain Current
- 650 mA
- Rds On - Drain-Source Resistance
- 250 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 1 V
- Vgs - Gate-Source Voltage
- 8 V
- Qg - Gate Charge
- 1.2 nC
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 300 mW
Show more parameters (9)
- Configuration
- Single
- Channel Mode
- Enhancement
- Tradename
- UltraMini
- Transistor Type
- 1 P-Channel
- Forward Transconductance - Min
- 200 mS
- Typical Turn-Off Delay Time
- 48 ns
- Typical Turn-On Delay Time
- 38 ns
- Part # Aliases
- CMUDM8005 PBFREE TR
- Unit Weight
- 0.000071 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.