NXP Semiconductors
MMRF5017HSR5
RF MOSFET Transistors 50V GaN on Sic 90W CW 3MHz-1GHz
Basic Information
View Datasheet ↗- Manufacturer
- NXP
- Brand
- NXP Semiconductors
- Product Category
- RF MOSFET Transistors
- Series
- MMRF5017HS
- Package
- NI-400S-2
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Transistor Polarity
- N-Channel
- Technology
- GaN SiC
- Id - Continuous Drain Current
- 200 mA
- Vds - Drain-Source Breakdown Voltage
- 125 V
- Output Power
- 125 W
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Operating Frequency
- 30 MHz to 2200 MHz
- Type
- RF Power MOSFET
- Number of Channels
- 1 Channel
- Pd - Power Dissipation
- 154 W
- Vgs - Gate-Source Voltage
- - 8 V
Show more parameters (2)
- Vgs th - Gate-Source Threshold Voltage
- - 2.3 V
- Part # Aliases
- 935360891138
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.