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STMicroelectronics

STN9360

Bipolar Transistors - BJT Hi Vltg fast-switch PNP pwr transistor

Basic Information

View Datasheet ↗
Manufacturer
STMicroelectronics
Product Category
Bipolar Transistors - BJT
Series
STN9360
Package
SOT-223-4
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

11 parameters
Transistor Polarity
PNP
Collector- Emitter Voltage VCEO Max
- 600 V
Emitter- Base Voltage VEBO
- 7 V
Collector-Emitter Saturation Voltage
- 0.5 V
Maximum DC Collector Current
- 0.5 A
Maximum Operating Temperature
+ 150 C
DC Current Gain hFE Max
200
Continuous Collector Current
- 0.5 V
DC Collector/Base Gain hfe Min
200
Pd - Power Dissipation
1.6 W
Unit Weight
0.003951 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

STN9360 Specifications and Datasheet | ChipSourceHub