Toshiba
RN1111(TE85L,F)
Bipolar Transistors - Pre-Biased Gen Purp Trans NPN SSM, 50V, 100A
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - Pre-Biased
- Series
- RN1111
- Package
- SSM-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Configuration
- Single
- Transistor Polarity
- NPN
- Typical Input Resistor
- 10 kOhms
- DC Collector/Base Gain hfe Min
- 120
- Maximum Operating Frequency
- 250 MHz
- Collector- Emitter Voltage VCEO Max
- 50 V
- Continuous Collector Current
- 100 mA
- Peak DC Collector Current
- 100 mA
- Pd - Power Dissipation
- 100 mW
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Collector- Base Voltage VCBO
- 50 V
Show more parameters (3)
- DC Current Gain hFE Max
- 700
- Emitter- Base Voltage VEBO
- 5 V
- Operating Temperature Range
- - 55 C to + 150 C
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.