ROHM Semiconductor
2SA2007E
Bipolar Transistors - BJT Trans GP BJT PNP 60V 12A
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2SA2007
- Package
- TO-220FP-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- - 60 V
- Collector- Base Voltage VCBO
- - 100 V
- Emitter- Base Voltage VEBO
- - 5 V
- Collector-Emitter Saturation Voltage
- - 0.3 V
- Maximum DC Collector Current
- - 12 A
- Gain Bandwidth Product fT
- 80 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 320
- Continuous Collector Current
- - 12 A
Show more parameters (3)
- DC Collector/Base Gain hfe Min
- 160
- Pd - Power Dissipation
- 25 W
- Unit Weight
- 0.068784 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.