Infineon Technologies
BGA855N6E6327XTSA1
RF Amplifier Low Noise Amplifier
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- RF Amplifier
- Series
- BGA855N6
- Package
- TSNP-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
17 parameters- Type
- LNA
- Technology
- SiGe
- Operating Frequency
- 1164 MHz to 1300 MHz
- P1dB - Compression Point
- - 14 dBm
- Gain
- 17.6 dB
- Operating Supply Voltage
- 1.1 V to 3.3 V
- NF - Noise Figure
- 0.6 dB
- Test Frequency
- 1214 MHz
- OIP3 - Third Order Intercept
- 1 dBm
- Operating Supply Current
- 4.4 mA
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 85 C
Show more parameters (5)
- Number of Channels
- 1 Channel
- Input Return Loss
- 11 dB
- Isolation dB
- 22 dB
- Pd - Power Dissipation
- 60 mW
- Part # Aliases
- BGA855N6 SP002337750
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.