ROHM Semiconductor
2SA1579U3HZGT106R
Bipolar Transistors - BJT TRANS-SS PNP SOT323 120V
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Package
- SOT-323-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
15 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 120 V
- Collector- Base Voltage VCBO
- 120 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 500 mV
- Pd - Power Dissipation
- 200 mW
- Gain Bandwidth Product fT
- 140 MHz
- Maximum Operating Temperature
- + 150 C
- Qualification
- AEC-Q101
- Continuous Collector Current
- 50 mA
Show more parameters (3)
- Country of Origin
- PH
- DC Collector/Base Gain hfe Min
- 180 at -2 mA, - 6 V
- DC Current Gain hFE Max
- 390 at -2 mA, - 6 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.