NXP Semiconductors
BFU730LXZ
RF Bipolar Transistors SiGe:C MMIC Transistor
Basic Information
View Datasheet ↗- Manufacturer
- NXP
- Brand
- NXP Semiconductors
- Product Category
- RF Bipolar Transistors
- Package
- SOT-883C-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Transistor Type
- Bipolar Wideband
- Technology
- SiGe
- Transistor Polarity
- NPN
- DC Collector/Base Gain hfe Min
- 205
- Collector- Emitter Voltage VCEO Max
- 10 V
- Emitter- Base Voltage VEBO
- 1.3 V
- Continuous Collector Current
- 5 mA
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Configuration
- Single
- Operating Frequency
- 53 GHz
- Output Power
- 11.7 dBm
Show more parameters (4)
- Maximum DC Collector Current
- 30 mA
- Pd - Power Dissipation
- 160 mW
- Part # Aliases
- 934066878225
- Unit Weight
- 0.000022 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.