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Vishay / Siliconix

IRFR120PBF-BE3

MOSFETs TO252 100V 7.7A N-CH MOSFET

Basic Information

View Datasheet ↗
Manufacturer
Vishay
Brand
Vishay / Siliconix
Product Category
MOSFETs
Series
IRFR
Package
DPAK-3 (TO-252-3)
Mounting Style
SMD/SMT
Packaging
Tube

Technical Specifications

22 parameters
Technology
Si
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
100 V
Id - Continuous Drain Current
7.7 A
Rds On - Drain-Source Resistance
270 mOhms
Vgs - Gate-Source Voltage
- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage
4 V
Qg - Gate Charge
16 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
42 W
Show more parameters (10)
Channel Mode
Enhancement
Configuration
Single
Country of Origin
TW
Fall Time
17 ns
Rise Time
27 ns
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
18 ns
Typical Turn-On Delay Time
6.8 ns
Part # Aliases
IRFR120PBF
Unit Weight
0.011640 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

IRFR120PBF-BE3 Specifications and Datasheet | ChipSourceHub