Diodes Incorporated
ZXTN19020DFFTA
Bipolar Transistors - BJT NPN 20V HIGH GAIN
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- Bipolar Transistors - BJT
- Series
- ZXTN19020
- Package
- SOT-23F-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 20 V
- Collector- Base Voltage VCBO
- 70 V
- Emitter- Base Voltage VEBO
- 7 V
- Collector-Emitter Saturation Voltage
- 190 mV
- Maximum DC Collector Current
- 6.5 A
- Gain Bandwidth Product fT
- 160 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 900
- Height
- 1 mm
Show more parameters (4)
- Length
- 3 mm
- Width
- 1.7 mm
- DC Collector/Base Gain hfe Min
- 300
- Pd - Power Dissipation
- 2000 mW
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.