Central Semiconductor
PN5134 TIN/LEAD
Bipolar Transistors - BJT NPN 20Vcbo 10Vceo 3.5Vebo 10mA 4.0pF
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- PN5134
- Package
- TO-92-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
Technical Specifications
13 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 10 V
- Collector- Base Voltage VCBO
- 20 V
- Emitter- Base Voltage VEBO
- 3.5 V
- Collector-Emitter Saturation Voltage
- 250 mV
- Pd - Power Dissipation
- 625 mW
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- 500 mA
- DC Collector/Base Gain hfe Min
- 2.5 at 10 V, 10 mA
Show more parameters (1)
- DC Current Gain hFE Max
- 150 at 1 V, 10 mA
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.