Central Semiconductor
2N3767
Bipolar Transistors - BJT NPN 100Vcbo 80Vceo 6.0Vebo 4.0A 25W
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N3767
- Package
- TO-66-2
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 80 V
- Collector- Base Voltage VCBO
- 100 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 2.5 V
- Gain Bandwidth Product fT
- 10 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 200 C
- DC Current Gain hFE Max
- 160 at 500 mA, 5 V
- Continuous Collector Current
- 4 A
Show more parameters (3)
- DC Collector/Base Gain hfe Min
- 20 at 1 A, 10 V
- Pd - Power Dissipation
- 25 W
- Part # Aliases
- 2N3767 PBFREE
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.