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STMicroelectronics

BUV48A

Bipolar Transistors - BJT NPN High Volt Power

Basic Information

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Manufacturer
STMicroelectronics
Product Category
Bipolar Transistors - BJT
Series
BUV48A
Package
TO-247-3
Mounting Style
Through Hole
RoHS
Compliant (source record)

Technical Specifications

15 parameters
Transistor Polarity
NPN
Configuration
Single
Collector- Emitter Voltage VCEO Max
450 V
Collector- Base Voltage VCBO
1 kV
Emitter- Base Voltage VEBO
7 V
Collector-Emitter Saturation Voltage
1.5 V
Maximum DC Collector Current
15 A
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
Height
20.15 mm
Length
15.75 mm
Width
5.15 mm
Show more parameters (3)
Continuous Collector Current
15 A
Pd - Power Dissipation
125000 mW
Unit Weight
0.229281 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

BUV48A Specifications and Datasheet | ChipSourceHub