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ON Semiconductor

NSVF4015SG4T1G

RF Bipolar Transistors BIP NPN 100MA 12V FT=10G

Basic Information

View Datasheet ↗
Manufacturer
ON Semiconductor
Product Category
RF Bipolar Transistors
Package
SC-82FL-4
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

15 parameters
Transistor Type
Bipolar
Technology
Si
Transistor Polarity
NPN
DC Collector/Base Gain hfe Min
60
Collector- Emitter Voltage VCEO Max
12 V
Emitter- Base Voltage VEBO
2 V
Continuous Collector Current
100 mA
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Configuration
Single
Qualification
AEC-Q101
Operating Frequency
10 GHz
Show more parameters (3)
Maximum DC Collector Current
100 mA
Pd - Power Dissipation
450 mW
Unit Weight
0.001235 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

NSVF4015SG4T1G Specifications and Datasheet | ChipSourceHub